2022 Latest Design Silicon Drift Detector - Dolphin0606FDI CMOS Industrial X-ray detector – haobo

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2022 Latest Design Silicon Drift Detector - Dolphin0606FDI CMOS Industrial X-ray detector – haobo Detail:

Dolphin0606FDI production is a fixed type and low noise x-ray flat panel detector based on CMOS. CMOS sensors use a single crystal silicon process for chip fabrication. Direct integral amplification within pixel cells leads to lower electronic noise, higher signal-to-noise ratio, and higher quantum detection efficiency (DQE) than amorphous silicon, so CMOS sensors are particularly suitable for low-dose imaging scenarios. Based on above characteristics, Dolphin0606FDI detector can be widely used in industrial SMT, electronics, lithium battery and chip wire bonding inspection.

Electronic noise is lower

Higher signal-to-noise ratio

Technology
Sensor	CMOS
Scintillator	CSI
Active Area	60 x 53.5 mm
Pixel Matrix	1200 x 1056
Pixel Pitch	50 μm
AD Conversion	14 bits
Interface
Communication Interface	Optical Fiber
Exposure Control	Pulse Sync In (Edge or Level) / Pulse Sync Out (Edge or Level)
Work Mode	Software Mode / HVG Sync Mode / FPD Sync Mode
Frame Speed	51fps (1×1)
Operating System	Windows7 / Windows10 OS 32 bits or 64 bits
Technical Performance
Resolution	10.0 lp/mm
Energy Range	40~160 KV
Lag	0.01% @1st frame
Dynamic Range	≥ 73dB
Sensitivity	100 lsb/uGy
SNR	48 dB @(20000lsb)
MTF	90% @(1 lp/mm)
	82% @(2 lp/mm)
	74% @(3 lp/mm)
DQE (2uGy)	65% @(0 lp/mm)
	48% @(1 lp/mm)
	37% @(2 lp/mm)
Mechanical
Dimension(H x W x D)	171 x 171 x 37 mm
Weight	2.8 Kg
Sensor Protection Material	Carbon Fiber
Housing Material	Aluminum Alloy
Environmental
Temperature Range	10~35°℃ (operating); -10~50℃(storage)
Humidity	30~70% RH(non-condensing)
Vibration	IEC/EN 60721-3 class 2M3(10~150 Hz,0.5 g)
Shock	IEC/EN 60721-3 class 2M3(11 ms,2 g)
Dust and Water Resistant	IPX0
Power
Supply	100~240 VAC
Frequency	50/60 Hz
Consumption	6 W
Application
Industrial	SMT, Electronics, Lithium Battery Chip Wire Bonding Inspection
Mechanical Dimension

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